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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB870 DESCRIPTION With TO-220C package Complement to type 2SD866 Low collector saturation voltage High collector current capability APPLICATIONS For power switching applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage INCH Collector-emitter voltage Emitter-base voltage ANG EMIC ES Open emitter Open base Open collector CONDITIONS OND TOR UC VALUE -130 -80 -7 -7 -15 UNIT V V V A A W ae ae Collector current (DC) Collector current-Peak Collector dissipation Junction temperature Storage temperature TC=25ae 40 150 -50~150 Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN TYP. 2SB870 SYMBOL MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-10mA; IB=0 -80 V VCEsat Collector-emitter saturation voltage IC=-5A; IB=-0.25A -0.5 V VBEsat Base-emitter saturation voltage IC=-5A; IB=-0.25A -1.5 V ICBO Collector cut-off current VCB=-100V; IE=0 -10 |I A IEBO Emitter cut-off current VEB=-5V; IC=0 -50 |I A hFE-1 DC current gain IC=-0.1A ; VCE=-2V 45 hFE-2 DC current gain fT Switching times Transition frequency ANG CH IC=-3A ; VCE=-2V 60 260 IC=-0.5A ; VCE=-10V ton Turn-on time tstg Storage time IN EMIC ES DUC ON 30 TOR MHz 0.1 |I s IC=-3A ; IB1=-IB2=-0.3A 0.8 |I s tf Fall time 0.1 |I s hFE-2 Classifications R 60-120 Q 90-180 P 130-260 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB870 SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions (unindicated tolerance:A 0.10mm) 3 |
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